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IRLB3034 TO 220

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IRLB3034 TO-220 IRLB3034PBF TO220 new MOS FET transistor

EGP70.00

IRLB3034 TO 220

IRLB3034 TO-220 IRLB3034PBF TO220 new MOS FET transistor

Applications
DC Motor Drive
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
 Optimized for Logic Level Drive
 Very Low RDS(ON) at 4.5V VGS
 Superior R*Q at 4.5V VGS
 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
 Fully Characterized Capacitance and Avalanche
SOA
 Enhanced body diode dV/dt and dI/dt Capability
Lead-Free

Absolute Maximum Ratings
Symbol Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current 􀀀
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
dv/dt Peak Diode Recovery  V/ns
TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy  mJ
IAR Avalanche Current 􀀀 A
EAR Repetitive Avalanche Energy 􀀀 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case  ––– 0.4
RθCS Case-to-Sink, Flat, Greased Surface 0.5 –––
RθJA Junction-to-Ambient ––– 62
See Fig. 14, 15, 22a, 22b,
A
°C
°C/W

IRLB3034 TO 220

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